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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 30 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CHM9952AJPT
CURRENT 3.7 Ampere CURRENT 2.9 Ampere
FEATURE
* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability.
1
SO-8
4.06 (0.160) 3.70 (0.146)
8
CONSTRUCTION
* N-Channel & P-Channel Enhancement in the package
5.00 (0.197) 4.69 (0.185)
4 5
.51 (0.020) .10 (0.012) 1.27 (0.05)BSC
1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)
.25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)
CIRCUIT
8
D1 D1 D2 D2 5
1 4 S1 G1 S2 G2
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol Parameter
TA = 25C unless otherwise noted
N-Channel
P-Channel
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
30
-30
V V
20
3.7
(Note 3)
20
-2.9
ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
A 15 2000 -55 to 150 -55 to 150 -10 mW C C
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM9952AJPT )
N-Channel Electrical Characteristics T
Symbol Parameter
A
= 25C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
30 1 +100 -100
V A nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A VGS=10V, ID=1A VGS=4.5V, ID=0.5A
1 60 83 3 5
3 80
V m
110 S
Forward Transconductance
VDS =15V, ID = 3.7A
SWITCHING CHARACTERISTICS (Note 4)
Qg Qgs Q tr toff tf
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=10V, ID=3.7A VGS=10V V DD= 10V ID = 1.0A , VGS = 10 V RGEN= 6
8.5 1.5 1.8 18 13 35 5
11 nC
ton
35 20 50 50 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Drain-Source Diode Forward Current
(Note 1)
1.2 1.2
A V
Drain-Source Diode Forward Voltage IS = 1.25A , VGS = 0 V (Note 2)
RATING CHARACTERISTIC CURVES ( CHM9952AJPT )
P-Channel Electrical Characteristics T
Symbol Parameter
A
= 25C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = -250 A VDS = -24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
-30 -1 +100 -100
V A nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = -250 A VGS=-10V, ID=-1.0A VGS=-4.5V, ID=-0.5A
-1 60 105 2 4.7
-3 100
V m
150 S
Forward Transconductance
VDS = -15V, ID = -2.9A
SWITCHING CHARACTERISTICS (Note 4)
Qg Qgs Q tr toff tf
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=-10V, ID=-2.9A VGS=-10V V DD= -10V I D = -1.0A , VGS = -10 V RGEN= 6
16 2 4 20 20 37 26
21 nC
ton
28 28 59 37 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Drain-Source Diode Forward Current
(Note 1)
-1.2 -1.2
A V
Drain-Source Diode Forward Voltage IS = -1.25A , VGS = 0 V (Note 2)

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